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Shikun Electronics Co., Ltd

ShenzhenshikunTechnology Co., Ltd

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IMZC120R012M2HXKSA1

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IMZC120R012M2HXKSA1
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Brand Name :Infineon Technologies
Model Number :IMZC120R012M2HXKSA1
Manufacturer :Infineon Technologies
Description :IMZC120R012M2HXKSA1
Supplier Device Package :PG-TO247-4-17
Series :CoolSiC™
FET Type :N-Channel
Technology :SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :1200 V
Current - Continuous Drain (Id) @ 25°C :129A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :15V, 18V
Rds On (Max) @ Id, Vgs :12mOhm @ 57A, 18V
Vgs(th) (Max) @ Id :5.1V @ 17.8mA
Gate Charge (Qg) (Max) @ Vgs :124 nC @ 18 V
Vgs (Max) :+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds :4050 pF @ 800 V
Power Dissipation (Max) :480W (Tc)
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IMZC120R012M2HXKSA1-Datasheet

Typical Applications

- Very low switching losses.


- Overload operation up to T<sub>vj</sub> = 200°C.


- Short-circuit withstand time of 2 µs.


- Robust body diode for hard commutation.


- XT interconnection technology for enhanced thermal performance.

The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.

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